Перегляд за автором "Ivanov, V.N."

Сортувати за: Порядок: Результатів:

  • Development of high-stable contact systems to gallium nitride microwave diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kapitanchuk, L.M.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Sheremet, V.N.; Sveshnikov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along ...
  • Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs 
    Venger, E.F.; Beliaev, A.A.; Boltovets, N.S.; Ermolovich, I.B.; Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Voitsikhovski, D.I.; Figielski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid ...
  • Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The electrophysical measurements of Schottky barrier diodes ...
  • Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices 
    Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to ...
  • Magnetron sputtered coatings of AlN-TiCrB₂ system 
    Panasyuk, A.D.; Podchernyaeva, I.A.; Neshpor, I.P.; Gawalek, W.; Ivanov, V.N. (Functional Materials, 2009)
    Wear and corrosion resistant coatings have been obtained by HF magnetron sputtering of an AlN-TiCrB₂ target (prepared by powder metallurgy technique) on Si, Al₂O₃ and GaAs single crystals. The coatings are characterized ...
  • Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals 
    Boltovets, N.S.; Basanets, V.V.; Ivanov, V.N.; Krivutsa, V.A.; Tsvir, A.V.; Belyaev, A.E.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A.; Venger, E.F.; Voitsikhovskyi, D.I.; Kholevchuk, V.V.; Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route ...
  • New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 
    Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. ...
  • Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis 
    Belyaev, A.E.; Bobyl, A.V.; Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Konnikov, S.G.; Kudryk, Ya.Ya.; Markovskiy, E.P.; Milenin, V.V.; Rudenko, E.M.; Tereschenko, G.F.; Ulin, V.P.; Ustinov, V.M.; Tsirlin, G.E.; Shpak, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the ...
  • On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Milenin, V.V.; Sveshnikov, Yu.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences ...
  • Porous nanostructured InP: technology, properties, application 
    Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...
  • SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Lytvyn, O.S.; Lytvyn, P.M.; Vlaskina, S.I.; Agueev, O.A.; Svetlichny, A.I.; Soloviev, S.I.; Sudarshan, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15R- and 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier ...
  • Technology and experimental studies of contacts for microwave diodes based on interstitial phases 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kurakin, A.M.; Milenin, V.V.; Soloviev, E.A.; Verimeychenko, G.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide ...
  • TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment 
    Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Lytvyn, O.S.; Prokopenko, I.V.; Ivanov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal ...